Study of InP/GaP quantum wells grown by vapor phase epitaxy
نویسندگان
چکیده
We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode sample and electrochemical profiling, electron accumulation were detected in layer so existence is confirmed. Results admittance spectroscopy deep-level transient showed defect formation GaP layers above energy position Ec-0.21 eV, 0.30 eV 0.93 eV. Keywords: well, profiling.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2023.03.55686.19404